基于量產的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.
面向的Ga2O3功率器件應用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech
中高壓（1-10 kV）氮化鎵功率器件新進展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices張宇昊美國弗吉尼亞理工大學助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
SiC等離子體波脈沖功率器件與應用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孫樂嘉西安電子科技大學副教授SUN LejiaAssociate Professor of Xidian University
面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江蘇博睿光電股份有限公司副總經理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd
SiC功率器件制造裝備技術及發展趨勢Technology and development trends of SiC power devices manufacturing equipment鞏小亮中國電子科技集團公司第四十八研究所、半導體裝備研究部主任Xiaoliang GONGDirector of Semiconductor equipment research department, The 48th Research Institute of China Electronics Technology Group Corporation
GaN/SiC功率器件在航天電源的應用前景Application prospect of GaN/SiC power devices in aerospace power supply萬成安北京衛星制造廠有限公司領域總師WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd
SiC功率器件在光伏逆變器中的應用進展Application progress of SiC power devices in photovoltaic inverters劉保頌錦浪科技技術研究中心總監LIU Baosong Technical director of Ginlong Technologies co.,ltd
碳化硅及氮化鎵功率器件在數據中心AC-DC電源上的應用及展望The application and prospect of wide band gap devices in AC-DC power supply in data center董慨臺達電子高階客制電源事業部中國區總監Dong KaiRD Director of CDBU, Delta Electronics
先進封裝大板扇出研發及功率器件封裝應用The Research on Panel Level Fan Out Package and its Application on Power Electronics林挺宇廣東佛智芯微電子技術研究有限公司副總經理，廣東省半導體智能裝備與系統集成創新中心首席科學家Tingyu LINDeputy General Manager of Guangdong FZX Microelectronics Technology Co. Ltd, Principal Scientist of CNC Equipment Cooperative Innovation Institute
SiC功率器件制造工藝特點與核心裝備創新進展Manufacturing process characteristics and key equipment development of SiC power devices鞏小亮中國電子科技集團公司第四十八研究所 半導體裝備研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation
美國國家工程院院士、美國加利福尼亞大學杰出教授、Transphorm 的聯合創始人Umesh K. MISHRA的高足吳毅鋒博士，分享了功率器件之爭：寬禁帶vs硅的發展動態。 吳毅鋒表示寬禁帶技術對于電力、能源節約具有非常重要的意義。我們需要繼續發展功率元件，該領域的市場潛力非常大，對于功率器件而言，可靠性至關重要。結合目前的發展情況，對于硅、碳化硅和硅基氮化鎵來說，硅基氮化鎵能力性可能更強。硅是目前功率元件中最成功的，已經
