New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑聯邦理工學院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英國布里斯托大學新興技術系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK
