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GaN基光電材料外延與MOCVD反應腔結構關聯性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯合創始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學LIU HuanNanjing University

用于氮化鎵異質外延的高溫PVD氮化鋁緩沖層技術High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

6英寸復合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氨熱法氮化鎵單晶生長研究進展及面臨的挑戰Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國強中國科學院蘇州納米技術與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化鋁單晶材料研究進展與應用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團第四十六所新材料研發中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

基于量產的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

高性能SiC解決方案賦能新一代主驅應用朱曉慧杭州士蘭微電子股份有限公司功率系統應用技術高級經理

碳化硅產業的機遇與挑戰周曉陽廣東芯聚能半導體有限公司總裁

英飛凌最新車規SiC產品與應用張 浩英飛凌科技（中國）有限公司主任工程師

安世碳化硅，綠色出行和綠色能源發展的助推器王駿躍安世半導體中國區SiC戰略及業務負責人

軌道交通SiC功率器件研究與應用進展劉國友株洲中車時代電氣股份有限公司中車科學家、功率半導體與集成技術全國重點實驗室副主任

國產化芯片機會和長城汽車布局耿偉長城汽車投資總監

第四代半導體材料平坦化研究進展Research Progress on Planarization of Fourth Generation Semiconductor Materials趙志強北京艾姆希半導體科技有限公司銷售總監ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

面向的Ga2O3功率器件應用：封裝、魯棒性和多維器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices張宇昊弗吉尼亞理工大學電力電子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

氧化鎵中缺陷擴展及模型Defect Expansion and Model in Gallium Oxide張赫之大連理工大學副教授ZHANG HezhiAssociate Professor, Dalian University of Technology

超寬禁帶半導體氧化鎵和氮化鋁特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN張道華深圳平湖實驗室第四代半導體首席科學家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

氧化鎵高導熱異質集成射頻器件High Thermal Conductivity Heterogeneous Integrated RF Devices for Ga?O?葉建東南京大學教授YE JiandongProfessor of Nanjing University