2024年11月18-21日，第十屆國際第三代半導體論壇（IFWS2024）&第二十一屆中國國際半導體照明論壇（SSLCHINA2024）、先進半導體技術應用創新展（CASTAS）將在蘇州國際博覽中心G館舉辦。

遠山半導體將攜多款產品亮相此次展會。值此，誠摯邀請第三代半導體產業同仁共聚論壇，蒞臨C03號展位參觀交流、洽談合作。  

公司簡介

遠山半導體是一家專注于第三代半導體氮化鎵材料及功率器件研發與生產的高新技術企業。公司擁有一支來自于中國、日本、美國的國際化核心技術團隊，股東方之一的日本PowDec株式會社是一家行業內知名的氮化鎵技術研發企業，在氮化鎵外延材料與芯片領域掌握全球領先的核心技術與生產工藝。

Hillsemi Technologies Inc is a high-tech company focusing on the R&D and production of the third generation semiconductor GaN materials and power devices. Our company has an international core technology team from China, Japan and the United States. One of our main shareholders, PowDec Co., Ltd., is a well-known GaN technology R&D enterprise in the industry. It has mastered the world's leading core technology and production process in the field of GaN epitaxial materials and chips. 

遠山采用“外延材料+芯片制造”的發展模式，具備完整的核心技術閉環與量產能力。與行業內大多數企業不同，遠山公司主打面向新能源行業應用的中高功率工業級氮化鎵功率器件，產品涵蓋800V、1200V、1700V、3300V等多種規格的藍寶石基氮化鎵外延材料與功率器件，產品具備高耐壓與高頻率“兩者兼得”的特點，多項性能指標處于行業內領先水平，主要應用于車載充電器、雙向DC-DC、微型逆變器、便攜儲能、V2G、硬開關等領域。在市場與客戶方面，公司已與某國際一線車企簽訂長期供貨協議，同時與國內多個新能源領域客戶建立合作關系并實現批量出貨。

Hillsemi adopts the development mode of "epitaxial material + chip manufacturing", and has complete core technology closed-loop and mass production capacity. Different from most enterprises in the industry, Hillsemi focuses on medium and high voltage industrial GaN power devices for new energy industry applications. Our products cover sapphire based GaN epitaxial materials and power devices of 800V, 1200V, 1700V, 3300V and other specifications, with the characteristics of both "high voltage resistance and high frequency". The specifications of Hillsemi’s power devices are at the leading level in the industry, mainly used in vehicle chargers, two-way DC-DC, micro inverters, portable energy storage, V2G, hard switches and other fields. In terms of market and customers, the company has signed a long-term supply agreement with an international first-line car manufacture, and has established cooperation relations with many domestic customers in the new energy field.

 成立至今，遠山已握有40余項國內外專利所構建的“護城河”及多款氮化鎵功率器件產品，展望未來，公司將以獨特的藍寶石基氮化鎵外延材料為基礎，結合獨有的PSJ高耐壓芯片工藝，持續推出多品類中高功率氮化鎵功率器件產品，努力助推氮化鎵技術從傳統的低功率消費級應用拓展到中高功率新能源行業應用，實現氮化鎵產品在工業級全域市場的廣泛應用。

Since establishment, Hillsemi has held more than 40 domestic and foreign patents to build a "moat" and a variety of gallium nitride power device products. Looking forward to the future, our company will continue to launch a variety of medium and high power GaN power device products based on the unique sapphire based GaN epitaxial materials, combined with the unique PSJ high voltage withstand chip process, and strive to promote the expansion of GaN technology from traditional low voltage consumer applications to high voltage new industrial applications, so as to achieve the wide application of GaN products in the industrial level global market.

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